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                                                                                                MMSTA42
                                                                                           SOT-323 Transistor (NPN)

                                                                                                    SOT-323
                                            1. BASE
                                            2. EMITTER
                                            3. COLLECTOR




Features
       High breakdown voltage
       Low collector-emitter saturation voltage
       Complementary to MMSTA92(PNP)


MARKING:K3M
MAXIMUM RATINGS (TA=25 unless otherwise noted)                                          Dimensions in inches and (millimeters)
 Symbol                 Parameter                     Value       Units
VCBO          Collector-Base Voltage                    300            V
VCEO          Collector-Emitter Voltage                 300            V
VEBO          Emitter-Base Voltage                       5             V
IC            Collector Current -Continuous             0.3            A
PC            Collector Power Dissipation               0.3            W
Tj            Junction Temperature                      150            
Tstg          Storage Temperature                     -55-150          

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                          Symbol           Test       conditions              MIN     TYP     MAX     UNIT

Collector-base breakdown voltage               V(BR)CBO       IC=100A,IE=0                         300                       V

Collector-emitter breakdown voltage            V(BR)CEO       IC=1mA,IB=0                          300                       V

Emitter-base breakdown voltage                 V(BR)EBO       IE=100A,IC=0                          5                        V

Collector cut-off current                        ICBO         VCB=200V,IE=0                                        0.25     A

Emitter cut-off current                          IEBO         VEB=5V,IC=0                                           0.1     A

                                                hFE(1)        VCE=10V,IC=1mA                       60

DC current gain                                 hFE(2)        VCE=10V,IC=10mA                      100             200

                                                hFE(3)        VCE=10V,IC=30mA                      75

Collector-emitter saturation voltage           VCE(sat)       IC=20mA,IB=2mA                                        0.2      V

Base-emitter saturation voltage                 VBE(sat)      IC=20mA,IB=2mA                                        0.9      V

Transition frequency                               fT         VCE=20V,IC=10mA,f=30MHz              50                      MHz
    MMSTA42
SOT-323 Transistor (NPN)
    MMSTA42
SOT-323 Transistor (NPN)

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