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TO-92 Transistor (NPN)
1.
TO-92
EMITTER
2. BASE
3. COLLECTOR
Features
Power amplifier
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 80 V
VEBO Emitter-Base Voltage 4 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous 0.5 A
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
RJA Thermal Resistance,Junction to Ambient 417 /W
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 80 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 4 V
Collector cut-off current ICBO VCB=80V, IE=0 0.1 A
Collector cut-off current ICEO VCE=60V, IB=0 0.1 A
Emitter cut-off current IEBO VEB=3V, IC=0 0.1 A
hFE1 VCE=1V, IC= 100mA 100 400
DC current gain
hFE2 VCE=1V, IC= 10mA 100
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V
Base-emitter saturation voltage VBE(sat) IC= 100mA, IB=10mA 1.2 V
VCE=2V, IC= 10mA
Transition frequency fT 100 MHz
f = 100MHz
MPSA06
TO-92 Transistor (NPN)
Typical Characteristics
MPSA06
TO-92 Transistor (NPN)
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