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                                                                                                 MPS2907
                                                                                          TO-92 Transistor (PNP)


                                                                                                      TO-92
                                                             1. EMITTER

                                                             2. BASE

                                                             3. COLLECTOR




Features
   Complementary NPN Type available (MPS2222)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol                 Parameter               Value       Units
VCBO        Collector-Base Voltage              -60         V
VCEO        Collector-Emitter Voltage           -40         V
VEBO        Emitter-Base Voltage                 -5         V
IC          Collector Current -Continuous       -0.6        A                      Dimensions in inches and (millimeters)
PC          Collector Power Dissipation        0.625        W
TJ          Junction Temperature                150         
Tstg        Storage Temperature               -55-150       

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                      Symbol         Test    conditions              MIN          TYP   MAX     UNIT
Collector-base breakdown voltage            V(BR)CBO     IC=-10A,IE=0                       -60                        V
Collector-emitter breakdown voltage         V(BR)CEO     IC=-10mA,IB=0                      -40                        V
Emitter-base breakdown voltage              V(BR)EBO     IE=-10A,IC=0                       -5                         V
Collector cut-off current                     ICBO       VCB=-50V,IE=0                                        -10     nA
Collector cut-off current                     ICEX       VCE=-30V,VEB(off)=-0.5V                              -50     nA
Emitter cut-off current                       IEBO       VEB=-3V,IC=0                                         -10     nA
                                             hFE(1)      VCE=-10V,IC=-0.1mA                 52
DC current gain                              hFE(2)      VCE=-10V,IC=-150mA                100                300
                                             hFE(3)      VCE=-10V,IC=-500mA                 32
                                            VCE(sat)     IC=-150mA,IB=-15mA                                   -0.4     V
Collector-emitter saturation voltage
                                            VCE(sat)     IC=-500mA,IB=-50mA                                   -0.67    V
                                            VBE(sat)     IC=-150mA,IB=-15mA                                    -1      V
Base-emitter saturation voltage
                                            VBE(sat)     IC=-500mA,IB=-50mA                                   -1.2     V
Transition frequency                           fT        VCE=-20V,IC=-50mA,f=100MHz        200                        MHz
Delay time                                     td                                                              10     nS
                                                         VCC=-30V,Ic=-150mA,IB1=-15mA
Rise time                                      tr                                                              25     nS
Storage time                                   tS        VCC=-6V,Ic=-150mA,                                   225     nS
Fall time                                      tf        IB1=IB2=-15mA                                         60     nS
CLASSIFICATION OF             hFE(2)
  Rank                                               L                                              H
  Range                                       100-200                                             200-300
                             MPS2907
                          TO-92 Transistor (PNP)

Typical Characteristics
   MPS2907
TO-92 Transistor (PNP)

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