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a44


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                                                                                               A44(NPN)
                                                                                         TO-92 Bipolar Transistors


                                                                1. EMITTER                          TO-92
                                                                2. BASE

                                                                3. COLLECTOR




Features
        High voltage


MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                    Parameter                     Value            Units
 VCBO         Collector-Base Voltage                     400                 V
 VCEO         Collector-Emitter Voltage                  400                 V
 VEBO         Emitter-Base Voltage                        5                  V
 IC           Collector Current -Continuous               0.2                A
                                                                                       Dimensions in inches and (millimeters)
 PC           Collector Power Dissipation                0.625               W
              Junction Temperature
 Tj                                                      150                 
              Storage Temperature
 Tstg                                                 -55 to +150            


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
              Parameter                       Symbol             Test     conditions    MIN      TYP      MAX          UNIT

 Collector-base breakdown voltage             V(BR)CBO        IC= 100A , IE=0            400                            V
 Collector-emitter breakdown voltage          V(BR)CEO        IC= 1mA , IB=0             400                            V
 Emitter-base breakdown voltage               V(BR)EBO        IE=100A, IC=0               5                             V
 Collector cut-off current                      ICBO          VCB=400 V, IE=0                              0.1         A
 Collector cut-off current                      ICEO          VCE=400 V                                     5          A
 Emitter cut-off current                        IEBO          VEB= 4V, IC=0                                0.1         A
                                               hFE (1)        VCE=10V , IC=10mA          80                300
                                               hFE(2)         VCE=10V, IC=1mA            70
 DC current gain
                                               hFE(3)         VCE=10V, IC=100mA          40
                                               hFE(4)         VCE=10V, IC=50mA           80
                                              VCE(sat)        IC=10mA, IB=1mA                              0.2          V
 Collector-emitter saturation voltage
                                              VCE(sat)        IC=50mA, IB=5mA                              0.3          V
 Base-emitter sataration voltage              VBE(sat)        IC=10mA, IB= 1mA                             0.75         V
                                                              VCE=20V, IC=10mA
 Transition    frequency                         fT                                      50                            MHz
                                                              f =30MHz


CLASSIFICATION OF hFE(1)
  Rank                                 A                          B1                      B2                       C

  Range                            80-100                       100-150                150-200                   200-300
    A44(NPN)
TO-92 Bipolar Transistors



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