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                                                                                                       A92(PNP)
                                                                                                 TO-92 Bipolar Transistors


                                                                1.
                                                                                                           TO-92
                                                                        EMITTER

                                                                   2.   BASE

                                                                   3. COLLECTOR




Features
       High voltage

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol                     Parameter                        Value              Units
 VCBO      Collector-Base Voltage                            -300                 V
 VCEO      Collector-Emitter Voltage                         -300                 V
 VEBO      Emitter-Base Voltage                               -5                  V
  IC       Collector Current -Continuous                     -500               mA            Dimensions in inches and (millimeters)
  PC       Collector Power Dissipation                       625                mW
  Tj       Junction Temperature                              150                  
 Tstg      Storage Temperature                              -55-150               
 RJA       Thermal Resistance, junction to Ambient           200               /mW
 RJC       Thermal Resistance, unction to Case               83.3              /mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
              Parameter                          Symbol            Test        conditions       MIN      TYP      MAX        UNIT

 Collector-base breakdown voltage                V(BR)CBO     IC=-100uA, IE=0                   -300                          V

 Collector-emitter breakdown voltage             V(BR)CEO     IC=-1mA, IB=0                     -300                          V

 Emitter-base breakdown voltage                  V(BR)EBO     IE=-100A, IC=0                     -5                           V

 Collector cut-off current                         ICBO       VCB= -200 V             IE=0                        -0.25      A

 Emitter cut-off current                           IEBO       VEB= -5 V, IC=0                                     -0.1       A

                                                  hFE(1)      VCE= -10 V, IC=- 1 mA              60

 DC current gain                                  hFE(2)      VCE= -10V, IC = -10 mA            80                250

                                                  hFE(3)      VCE= -10 V, IC= -80 mA            60

 Collector-emitter saturation voltage            VCE(sat)     IC= -20 mA, IB= -2 mA                               -0.2        V

 Base-emitter saturation voltage                 VBE(sat)     IC= -20 mA, IB= -2 mA                               -0.9        V
                                                              VCE= -20 V, IC= -10 mA
 Transition frequency                                fT                                          50                          MHz
                                                              f = 30MHz


CLASSIFICATION OF hFE(2)
  Rank                                 A                           B1                          B2                        C

  Range                             80-100                    100-150                        150-200               200-250
    A92(PNP)
TO-92 Bipolar Transistors

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