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                                                                                               A94(PNP)
                                                                                         TO-92 Bipolar Transistors


                                                                 1. EMITTER                       TO-92
                                                                 2. BASE

                                                                 3. COLLECTOR



Features
        High voltage

MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                    Parameter                      Value            Units
 VCBO         Collector-Base Voltage                      -400                V
 VCEO         Collector-Emitter Voltage                   -400                V
 VEBO         Emitter-Base Voltage                         -5                 V
 IC           Collector Current -Continuous               -0.2                A
 PC           Collector Power Dissipation                 0.625               W
              Junction Temperature
 Tj                                                       150                 
              Storage Temperature
 Tstg                                                 -55 to +150             
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
              Parameter                       Symbol              Test     conditions   MIN     TYP    MAX     UNIT

 Collector-base breakdown voltage             V(BR) CBO         IC= -100A, IE=0         -400                    V

 Collector-emitter breakdown voltage          V(BR) CEO         IC= -1mA,IB=0           -400                    V

 Emitter-base breakdown voltage               V(BR) EBO         IE=-100A,IC=0            -5                     V

 Collector cut-off current                      ICBO            VCB=-400V, IE=0                         -0.1    A

 Collector cut-off current                      ICEO            VCE=-400V, IB=0                           -5    A

 Emitter cut-off current                        IEBO            VEB= -4V, IC=0                          -0.1    A

                                               hFE(1)           VCE=-10V, IC=-10mA      80              300

 DC current gain                               hFE(2)           VCE=-10V, IC=-1mA       70

                                               hFE(3)           VCE=-10V, IC=-100mA     60

                                              VCE (sat)         IC=-10mA, IB=-1mA                       -0.2    V
 Collector-emitter saturation voltage
                                              VCE (sat)         IC=-50mA, IB=-5mA                       -0.3    V

 Base-emitter saturation voltage              VBE (sat)         IC=-10mA, IB= -1mA                     -0.75    V

                                                                VCE=-20V, IC=-10mA
 Transition frequency                            fT                                     50                     MHz
                                                                f =30MHz
    A94(PNP)
TO-92 Bipolar Transistors

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