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                                                                                                        A1015
                                                                                                      Transistor(PNP)

                                                                                                          TO-92
                                                             1.EMITTER

                                                             2.COLLECTOR

                                                             3.BASE




Features
        Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol         Parameter                                     Value           Units
VCBO           Collector-Base Voltage                          -50              V
VCEO           Collector-Emitter Voltage                       -50              V
VEBO           Emitter-Base Voltage                            -5               V        Dimensions in inches and (millimeters)
IC             Collector Current -Continuous                  -150             mA
PD             Collector Power Dissipation                    400             mW
Tj             Junction Temperature                           125               
Tstg           Storage Temperature                           -55-125            

 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                        Symbol             Test   conditions         MIN         TYP     MAX     UNIT

     Collector-base breakdown voltage             V(BR)CBO     IC= -100A, IE=0                  -50                        V

     Collector-emitter breakdown voltage          V(BR)CEO     IC= -0. 1mA, IB=0                -50                        V

     Emitter-base breakdown voltage               V(BR)EBO     IE= -100A, IC=0                  -5                         V

     Collector cut-off current                       ICBO      VCB= -50V,IE=0                                     -0.1     A

     Collector cut-off current                       ICEO      VCE= -50V, IB=0                                    -0.1     A

     Emitter cut-off current                         IEBO      VEB= -5V, IC=0                                     -0.1     A

     DC current gain                                 hFE       VCE= -6V, IC= -2mA               70                 400

     Collector-emitter saturation voltage         VCE(sat)     IC= -100mA, IB= -10mA                              -0.3     V

     Base-emitter saturation voltage              VBE(sat)     IC= -100mA, IB= -10mA                              -1.1     V
                                                               VCE= -10 V, IC= -1mA
     Transition frequency                             fT                                        80                        MHz
                                                               f =30MHz
     Collector Output Capacitance                    Cob       VCB=-10V,IE=0,f=1MHZ                                 7      pF
                                                               VCE= -6 V, IC= -0.1mA,
     Noise Figure                                    NF                                                             6      dB
                                                               f =1KHz,RG=10K
     CLASSIFICATION            OF   hFE
       Rank                                      O                                   Y                            GR

       Range                                   70-140                            120-240                        200-400
                            A1015
                          Transistor(PNP)


Typical Characteristics

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