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b772_to-251


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                                                                                                        B772(PNP)
                                                                                                        TO-251 Transistor



                                                    1. EMITTER                                               TO-251
                                                    2. COLLECTOR


                                                    3 BASE
                      1    2 3

Features
        Low speed switching

MAXIMUM RATINGS (TA=25 unless otherwise noted)

  Symbol                  Parameter                      Value      Units
 VCBO         Collector-Base Voltage                      -40         V
 VCEO         Collector-Emitter Voltage                   -30         V
 VEBO         Emitter-Base Voltage                        -6          V                        Dimensions in inches and (millimeters)

 IC           Collector Current -Continuous               -3          A
 PC           Collector Power Dissipation                1.25         W
 Tj           Junction Temperature                       150          
 Tstg         Storage Temperature                     -55-150         

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                         Symbol              Test     conditions         MIN     TYP      MAX       UNIT
 Collector-base breakdown voltage             V(BR)CBO           IC=-100A ,IE=0                 -40                         V
 Collector-emitter breakdown voltage          V(BR)CEO           IC= -10mA , IB=0              -30                          V
 Emitter-base breakdown voltage               V(BR)EBO           IE= -100A,IC=0                 -6                          V
 Collector cut-off current                    ICBO               VCB= -40V, IE=0                                  -1       A
 Collector cut-off current                    ICEO               VCE=-30V, IB=0                                  -10       A
 Emitter cut-off current                      IEBO               VEB=-6V, IC=0                                    -1       A
 DC current gain                              hFE                VCE= -2V, IC= -1A             60                400
 Collector-emitter saturation voltage         VCE(sat)           IC=-2A, IB= -0.2A                               -0.5       V
 Base-emitter saturation voltage              VBE(sat)           IC=-2A, IB= -0.2A                               -1.5       V
                                                                 VCE= -5V, IC=-0.1A
 Transition frequency                          fT                                              50       80                 MHz
                                                                 f =10MHz


CLASSIFICATION OF hFE
  Rank                R                                  O                               Y                        GR

 Range              60-120                           100-200                         160-320                    200-400
                            B772(PNP)
                            TO-251 Transistor


Typical   characteristics



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