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b772s


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                                                                                                            B772S
                                                                                                         Transistor(PNP)


                                                                1. EMITTER
                                                                                                               TO-92
                                                                2. COLLECTOR
                                                                3 BASE




 Features
        Low speed switching


MAXIMUM RATINGS (TA=25 unless otherwise noted)

  Symbol                     Parameter                       Value          Units
 VCBO         Collector-Base Voltage                           -40           V
 VCEO         Collector-Emitter Voltage                        -30           V
 VEBO         Emitter-Base Voltage                             -6            V
                                                                                               Dimensions in inches and (millimeters)
 IC           Collector Current -Continuous                    -3            A
 PC           Collector Power Dissipation                    0.625           W
 RJA          Thermal Resistance, junction to Ambient          500          /W
 Tj           Junction Temperature                             150           
 Tstg         Storage Temperature                            -55-150         

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                          Symbol               Test     conditions          MIN      TYP       MAX      UNIT
 Collector-base breakdown voltage             V(BR)CBO          IC=-100A ,IE=0                     -40                          V
 Collector-emitter breakdown voltage          V(BR)CEO          IC= -10mA , IB=0                   -30                          V
 Emitter-base breakdown voltage               V(BR)EBO          IE= -100A,IC=0                      -6                          V
 Collector cut-off current                    ICBO              VCB= -40V, IE=0                                       -1       A
 Collector cut-off current                    ICEO              VCE=-30V, IB=0                                       -10       A
 Emitter cut-off current                      IEBO              VEB=-6V, IC=0                                         -1       A
 DC current gain                              hFE               VCE= -2V, IC= -1A                  60                400
 Collector-emitter saturation voltage         VCE(sat)          IC=-2A, IB= -0.2A                                    -0.5       V
 Base-emitter saturation voltage              VBE(sat)          IC=-2A, IB= -0.2A                                    -1.5       V
                                                                VCE= -5V, IC=-0.1A
 Transition frequency                           fT                                                 50        80                MHz
                                                                f =10MHz


CLASSIFICATION OF hFE
  Rank                 R                                 O                                 Y                          GR

 Range              60-120                           100-200                         160-320                        200-400
                            B772S
                          Transistor(PNP)

Typical characteristics



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