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                                                                                     BC307/308/309(PNP)
                                                                                            TO-92 Bipolar Transistors


                                                                1. COLLECTOR                          TO-92
                                                                2. BASE

                                                                3. EMITTER




Features
       Amplifier dissipation NPN Silicon

MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                    Parameter                    Value             Units
              Collector-Emitter Voltage    BC307         -45
VCEO                                                                       V
                                        BC308/309        -25
              Emitter-Base Voltage          BC307         -6
VEBO                                                                       V
                                        BC308/309         -5
IC            Collector Current -Continuous              -0.1              A
PC            Collector Power Dissipation                500              mW             Dimensions in inches and (millimeters)
              Thermal Resistance,
RJA                                                      357              /W
               Junction to Ambient
RJC           Thermal Resistance, Junction to Case       125              /W
Tj            Junction Temperature                       150               
Tstg          Storage Temperature                       -55-150            

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
             Parameter                       Symbol                Test        conditions             MIN     TYP       MAX     UNIT
                                                        IC=-10A, IE=0                     BC307       -50
 Collector-base breakdown voltage            V(BR)CBO                                                                             V
                                                                                        BC308/309     -30
                                                        IC=-2mA, IB=0                      BC307      -45
 Collector-emitter breakdown voltage         V(BR)CEO                                                                             V
                                                                                        BC308/309     -25
 Emitter-base breakdown voltage              V(BR)EBO   IE=-10A, IC=0                                  -5                         V
                                                         VCB=-45V,IE=0                     BC307
 Collector cut-off current                      ICBO                                                                    -15       nA
                                                        VCB=-25V,IE=0                   BC308/309
 Emitter cut-off current                        IEBO    VEB=-5V, IC=0                                                   -15       nA
 DC current gain                                hFE     VCE=-5V, IC=-2mA                              120               800
                                                        IC=-10mA, IB=-0.5mA                                             -0.3      V
 Collector-emitter saturation voltage        VCE(sat)
                                                        IC=-100mA, IB=-5mA                                              -0.6      V
                                                        IC=-10mA, IB=-0.5mA                                             -0.75     V
 Base-emitter saturation voltage             VBE(sat)
                                                        IC=-100mA, IB=-5mA                                               -1       V
 Base-emitter voltage                           VBE     VCE=-5V, IC=-2mA                             -0.55              -0.75     V
 Transition frequency                            fT     VCE=-5V, IC=-10mA, f=50MHz                            130               MHz
 Collector output capacitance                   Cob     VCB=-10V, IE=0, f=1MHz                                           6        pF
                                                        VCE=-5V, IC=-0.2mA ,
                                                        f=1KHz, RG=2K        BC307/BC308                                 10
 Noise figure                                   NF                                  BC309                                4        dB
                                                        VCE=-5V, IC=-0.2mA ,
                                                          f=30-15KHz, RG=2K         BC309                                4
 CLASSIFICATION OF            hFE
 Rank                                       A                                       B                               C
 Range                                    120-220                                 180-460                       380-800
                          BC307/308/309(PNP)
                            TO-92 Bipolar Transistors


Typical Characteristics

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