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                                                                                       BC635/637/639(NPN)
                                                                                             TO-92 Bipolar Transistors

                                                                                                              TO-92
                                                                    1. EMITTER

                                                                    2. COLLECTOR

                                                                    3. BASE




Features
        High current transistors




                                                                                           Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
       Symbol                                   Parameter                                          Value              Units
VCBO                Collector-Emitter Voltage                                      BC635             45                V
                                                                                   BC637             60                V
                                                                                   BC639            100                V
VCEO                Collector-Emitter Voltage                                      BC635             45                V
                                                                                   BC637             60                V
                                                                                   BC639             80                V
VEBO                Emitter-Base Voltage                                                             5                 V
IC                  Collector Current -Continuous                                                    1                 A
PC                  Collector Power Dissipation                                                    0.625               W
TJ                  Junction Temperature                                                            150                
Tstg                Storage Temperature                                                            -65-150             
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
             Parameter                          Symbol       Test      conditions                     MIN       TYP   MAX     UNIT
                                                           IC=10mA, IB=0                   BC635         45                    V
 Collector-emitter breakdown voltage            V(BR)CEO                                   BC637         60                    V
                                                                                           BC639         80                    V
 Collector cut-off current                        ICBO     VCB= 30 V,IE=0                                             0.1     A
 Emitter cut-off current                          IEBO     VEB=5V, IB=0                                               0.1     A
                                                 hFE(1)    VCE=2 V, IC= 5mA                              25
                                                 hFE(2)    VCE=2V, IC=150mA            BC635             40           250
 DC current gain                                                              BC637-10/BC639-10        63             160
                                                                              BC637-16/BC639-16       100             250
                                                 hFE(3)    VCE=2V, IC= 500mA                             25
 Collector-emitter saturation voltage           VCE(sat)   IC=500mA, IB=50mA                                          0.5      V
 Base-emitter voltage                             VBE      VCE=2V, IC=500mA                                            1       V
 Transition frequency                              fT      VCE=5V, IC=10mA,f= 50 MHZ                            100           MHz
                          BC635/637/639(NPN)
                            TO-92 Bipolar Transistors
Typical Characteristics

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