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                                                                                    BC636/BC638/BC640
                                                                                             Transistor(PNP)


                                                               1. EMITTER                              TO-92
                                                               2. COLLECTOR

                                                               3. BASE




Features
     High current transistors

MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                   Parameter                        Value          Units
  VCBO      Collector-Base Voltage         BC636             -45
                                            BC638            -60           V
                                            BC640           -100
  VCEO      Collector-Emitter Voltage      BC636             -45
                                            BC638            -60           V
                                            BC640            -80
                                                                                         Dimensions in inches and (millimeters)
  VEBO      Emitter-Base Voltage                             -5            V
    IC      Collector Current -Continuous                    -1            A
   PC       Collector Power Dissipation                     0.83           W
  RJA       Thermal Resistance, junction to Ambient         150           /W
    Tj      Junction Temperature                            150            
   Tstg     Storage Temperature                            -55-150         

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

          Parameter                            Symbol              Test     conditions                MIN     TYP     MAX     UNIT

                                                              IC=-100A,IE=0                 BC636     -45
Collector-base breakdown voltage               V(BR)CBO                                     BC638     -60                         V
                                                                                            BC640     -100
                                                              IC =-1mA,IB=0                 BC636     -45
Collector-emitter breakdown voltage            V(BR)CEO                                     BC638     -60                         V
                                                                                            BC640     -80
Emitter-base breakdown voltage                 V(BR)EBO       IE=-100A,IC=0                            -5                         V
Collector cut-off current                         ICBO        VCB=-30V,IE=0                                           -0.1        A
Emitter cut-off current                           IEBO        VEB= -5V,IC=0                                           - 0.1       A
                                                 hFE(1)       VCE= -2V,IC=- 5mA                        40
DC current gain                                  hFE(2)       VCE= -2V,IC=- 150mA                      63             250
                                                 hFE(3)       VCE= -2V,IC=- 500mA                      25
Collector-emitter saturation voltage            VCE(sat)      IC=- 500mA,IB= -50mA                                    -0.5        V
Base-emitter voltage                              VBE         VCE= -2V,IC= -500mA                                      -1         V
Transition frequency                                  fT      VCE= -5V,IC=- 50mA,f=100MHz             100                     MHz


CLASSIFICATION OF            hFE(2)
Rank                                            BC636-10                                   BC636-16, BC638-16, BC640-16
Range                                             63-160                                                 100-250
                          BC636/BC638/BC640
                             Transistor(PNP)

Typical Characteristics

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