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bc807w


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                                                                                                  BC807-16W
                                                                                                  BC807-25W
                                                                                                  BC807-40W
                                                                                            SOT-323 Transistor(PNP)
                                      1. BASE
                                      2. EMITTER
                                      3. COLLECTOR
                                                                                                      SOT-323


 Features
      Ldeally suited for automatic insertion
      epitaxial planar die construction
      complementary to BC817W

 MARKING: 16W:5A; 25W:5B; 40W:5C

 MAXIMUM RATINGS (TA=25 unless otherwise noted)
  Symbol                Parameter                  Value      Units
   VCBO      Collector-Base Voltage                  -50       V
   VCEO      Collector-Emitter Voltage               -45       V                       Dimensions in inches and (millimeters)
   VEBO      Emitter-Base Voltage                    -5        V
     IC      Collector Current -Continuous           -0.5      A
    PC       Collector Power Dissipation             0.2       W
    TJ       Junction Temperature                  150         
    Tstg     Storage Temperature                   -55-150     

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

           Parameter                                           Symbol         Test       conditions     MIN      MAX    UNIT

 Collector-base breakdown voltage                                  VCBO     IC= -10A,      IE=0          -50              V

 Collector-emitter breakdown voltage                               VCEO     IC= -10mA, IB=0              -45              V

 Emitter-base breakdown voltage                                    VEBO     IE= -1A,      IC=0           -5               V

 Collector cut-off current                                         ICBO     VCB= -20 V , IE=0                    -0.1     A

 Collector cut-off current                                         ICEO     VCE= -20 V , IB=0                    -0.2     A

 Emitter cut-off current                                           IEBO     VEB= -5 V ,     IC=0                 -0.1     A
                                                                                                         100      250
 DC current gain                                    807-16W        hFE(1)   VCE= -1V,     IC= -100mA     160     400
                                                   807-25W                                               250     600
                                                   807-40W
                                                                   hFE(2)   VCE= -1V,     IC= -500mA      40

 Collector-emitter saturation voltage                           VCE(sat)    IC=-500mA, IB= -50 mA                -0.7     V

 Base-emitter   voltage                                         VBE(on)     VCE= -1V,     IC= -500mA             -1.2     V
                                                                            VCE= -5 V,     IC= -10mA
 Transition frequency                                                fT                                  80              MHz
                                                                            f=100MHz
 Collector output capacitance                                       Cob     VCB=-10V,f=1MHz                      10       pF
                            BC807-16W
                            BC807-25W
                            BC807-40W
                          SOT-323 Transistor(PNP)
Typical Characteristics
BC807-16W
BC807-25W
BC807-40W
Switching Diodes



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