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BC868
SOT-89 Transistor(NPN)
1. BASE
2. COLLECTOR
SOT-89
3. EMITTER
4.6
B
4.4
1.6
Features
1.8
1.4 1.4
High current 2.6 4.25
2.4 3.75
Low voltage
0.8
MIN
0.53
MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.44 0.13 B
0.48 0.40
2x)
0.37 0.35
1.5
3.0
Symbol Parameter Value Units
VCBO Collector-Base Voltage 32 V Dimensions in inches and (millimeters)
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 32 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V
Collector cut-off current ICBO VCB=25V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
hFE(1) VCE=1V,IC=500mA 85 375
DC current gain hFE(2) VCE=1V,IC=1A 60
hFE(3) VCE=10V,IC=5mA 50
Collector-emitter saturation voltage VCE(sat) IC=1A,IB=100mA 0.5 V
VBE1 VCE=10V,IC=5mA 0.62 V
Base-emitter voltage
VBE2 VCE=1V,IC=1A 1 V
Transition frequency fT VCE=5V,IC=10mA,f=100MHz 40 MHz
CLASSIFICATION OF hFE(1)
Rank BC868-10 BC868-16 BC868-25
Range 85-160 100-250 160-375
Marking CBC CCC CDC
BC868
SOT-89 Transistor(NPN)
Typical Characteristics
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