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BCP54,55,56
SOT-223 Transistor(NPN)
1. BASE SOT-223
2. COLLECTOR
1 3. EMITTER
Features
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP51 ... BCP53 (PNP)
MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter BCP54 BCP55 BCP56 Units
VCBO Collector-Base Voltage 45 60 100 V
VCEO Collector-Emitter Voltage 45 60 80 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 1.5 W
RJA Thermal Resistance Junction to Ambient 94 /W
Tstg Storage Temperature Range -65to+150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage BCP54 45
BCP55 V(BR)CBO IC= 0.1mA,IE=0 60 V
BCP56 100
Collector-emitter breakdown voltage BCP54 45
BCP55 V(BR)CEO IC= 10mA,IB=0 60 V
BCP56 80
Base-emitter breakdown voltage V(BR)EBO IC= 10A,IE=0 5 V
Collector cut-off current ICBO VCB= 30 V, IE=0 100 nA
hFE(1) VCE= 2V, IC=5mA 25
DC current gain hFE(2) VCE= 2V, IC=150m A 63 250
hFE(3) VCE= 2V, IC=500m A 25
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.5 V
Base-emitter voltage VBE VCE=2V, IC=500m A 1 V
Transition frequency fT VCE=10V,IC=50mA,f=100MHz 100 MHz
CLASSIFICATION OF hFE(2)
Rank BCP54-10, BCP55-10, BCP56-10 BCP54-16, BCP55-16, BCP56-16
Range 63-160 100-250
BCP54,55,56
SOT-223 Transistor(NPN)
BCP54,55,56
SOT-223 Transistor(NPN)
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