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                                                                                              BCP68
                                                                                     SOT-223 Transistor(NPN)
                                             1. BASE
                                             2. COLLECTOR                                         SOT-223
                      1                      3. EMITTER



Features
       For general AF applications
       High collector current
       High current gain
       Low collector-emitter saturation voltage
       Complementary type: BCP69 (PNP)
MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol      Parameter                                       Value         Units
                                                                                   Dimensions in inches and (millimeters)
VCBO        Collector-Base Voltage                           32            V
VCEO        Collector-Emitter Voltage                        20            V
VEBO        Emitter-Base Voltage                             5             V
IC          Collector Current -Continuous                    1             A
PC          Collector Power Dissipation                      1             W
RJA         Thermal Resistance Junction to Ambient           94           /W
Tstg        Storage Temperature Range                     -65to+150        

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

           Parameter                        Symbol        Test      conditions               MIN     TYP     MAX     UNIT

 Collector-base breakdown voltage            V(BR)CBO   IC=100A,IE=0                         32                       V

 Collector-emitter breakdown voltage         V(BR)CEO   IC=1mA,IB=0                          20                       V

 Emitter-base breakdown voltage              V(BR)EBO   IE=100A, =0                           5                       V

 Collector cut-off current                       ICBO   VCB=25V,IE=0                                         0.1      A

 Emitter cut-off current                         IEBO   VEB=5V,IC=0                                          0.1      A

                                              hFE(1)    VCE=1V,IC=500mA                      85              375

 DC current gain                              hFE(2)    VCE=1V,IC=1A                         60

                                              hFE(3)    VCE=10V,IC=5mA                       50

 Collector-emitter saturation voltage        VCE(sat)   IC=1A,IB=100mA                                       0.5      V

                                              VBE1      VCE=10V,IC=5mA                                       0.68     V
 Base-emitter voltage
                                              VBE2      VCE=1V,IC=1A                                          1       V

 Transition frequency                             fT    VCE=5V,IC=10mA,f=100MHz              40                      MHz

 Collector output capacitance                    Cob    VCB=5V,IE=0,f=1MHz                            38              pF

CLASSIFICATION OF            hFE(1)
 Rank                                   BCP68-10                        BCP68-16                      BCP68-25
 Range                                  85-160                           100-250                       160-375
                                BCP68
                          SOT-223 Transistor(NPN)


Typical Characteristics
      BCP68
SOT-223 Transistor(NPN)

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