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bcw61c_sot-23


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                                                                                                   BCW61C
                                                                                              SOT-23 Transistor(PNP)

                                                                                                        SOT-23
                                            1. BASE
                                            2. EMITTER
                                            3. COLLECTOR




Features
        Low current

        Low voltage



AXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                         Dimensions in inches and (millimeters)
 Symbol                     Parameter                      Value            Units
VCBO        Collector-Emitter Voltage                        -32              V
VCEO        Collector-Emitter Voltage                        -32              V
VEBO        Emitter-Base Voltage                             -5               V
IC          Collector Current -Continuous                   -0.1              A
Pc          Collector Power dissipation                     0.25              W
Tj          Junction Temperature                            150               
Tstg        Storage Temperature                            -55-150            


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

           Parameter                           Symbol                Test   conditions          MIN      TYP      MAX      UNIT

Collector-base breakdown voltage               V(BR)CBO     IC = -10A, IE=0                      -32                        V
Collector-emitter breakdown voltage            V(BR)CEO     IC = -1mA, IB=0                      -32                        V
Emitter-base breakdown voltage                 V(BR)EBO     IE=-10A, IC=0                        -5                         V
Collector cut-off current                        ICBO       VCB=-32V, IE=0                                       -0.02      A
Collector cut-off current                        IEBO       VEB=-4V, IC=0                                        -0.02      A
                                                 hFE1       VCE=-5V, IC= -10A                    40
DC current gain                                  hFE2       VCE=-5V, IC= -2mA                   250               460
                                                 hFE3       VCE=-1V, IC= -50mA                  100
                                                            IC=-10 mA, IB=-0.25mA               -0.06            -0.25      V
Collector-emitter saturation voltage           VCE(sat)
                                                            IC=-50 mA, IB=-1.25mA               -0.12            -0.55      V
                                                            IC=-10 mA, IB=-0.25mA               -0.6             -0.85      V
Base-emitter saturation voltage                VBE(sat)
                                                            IC=-50mA, IB=-1.25mA                -0.68            -1.05      V
                                                            VCE=-5V, IC= -10A                            -0.55              V
Base-emitter voltage                             VBE        VCE=-5V, IC= -2mA                   -0.6             -0.75      V
                                                            VCE=-1V, IC= -50mA                           -0.72              V
Transition frequency                              fT        VCE= -5V,IC=-10mA,f=100MHz          100                        MHz
Collector capacitance                            CC         VCB= -10V,IE=0,f=1MHz                         4.5               pF
Emitter capacitance                               Ce        VEB= -0.5V,IC=0,f=1MHz                        11                pF


     Marking    BC
                             BCW61C
                          SOT-23 Transistor(PNP)



Typical Characteristics
   BCW61C
SOT-23 Transistor(PNP)



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