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BCW61B
SOT-23 Transistor(PNP)
1. BASE
SOT-23
2. EMITTER
3. COLLECTOR
Features
Low current
Low voltage
AXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units Dimensions in inches and (millimeters)
VCBO Collector-Emitter Voltage -32 V
VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.1 A
Pc Collector Power dissipation 0.25 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -10A, IE=0 -32 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -32 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-32V, IE=0 -0.02 A
Collector cut-off current IEBO VEB=-4V, IC=0 -0.02 A
hFE1 VCE=-5V, IC= -10A 30
DC current gain hFE2 VCE=-5V, IC= -2mA 180 310
hFE3 VCE=-1V, IC= -50mA 80
IC=-10 mA, IB=-0.25mA -0.06 -0.25 V
Collector-emitter saturation voltage VCE(sat)
IC=-50 mA, IB=-1.25mA -0.12 -0.55 V
IC=-10 mA, IB=-0.25mA -0.6 -0.85 V
Base-emitter saturation voltage VBE(sat)
IC=-50mA, IB=-1.25mA -0.68 -1.05 V
VCE=-5V, IC= -10A -0.55 V
Base-emitter voltage VBE VCE=-5V, IC= -2mA -0.6 -0.75 V
VCE=-1V, IC= -50mA -0.72 V
Transition frequency fT VCE= -5V,IC=-10mA,f=100MHz 100 MHz
Collector capacitance CC VCB= -10V,IE=0,f=1MHz 4.5 pF
Emitter capacitance Ce VEB= -0.5V,IC=0,f=1MHz 11 pF
Marking BB
BCW61B
SOT-23 Transistor(PNP)
Typical Characteristics
BCW61B
SOT-23 Transistor(PNP)
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