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                                                                                           BF820/BF822
                                                                                          SOT-23 Transistor(NPN)
                                                                                                     SOT-23
                                             1. BASE
                                             2. EMITTER
                                             3. COLLECTOR



Features
         Low current (max.50 mA)
         High voltage (max.300V)
         Telephony and professional communication equipment.



MARKING: BF820:1V, BF822: 1X
                                                                                     Dimensions in inches and (millimeters)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

  Symbol                                        Parameter                                      Value             Units
                    Collector-Base Voltage                                  BF820              300
  VCBO                                                                                                               V
                                                                            BF822              250
                    Collector-Emitter Voltage                              BF820               300
  VCEO                                                                                                               V
                                                                           BF822               250
  VEBO              Emitter-Base Voltage                                                        5                    V

  IC                Collector Current -Continuous                                               50                   mA

  PC                Collector Power Dissipation                                                0.25                  W

  Tj                Junction Temperature                                                       150                   

  Tstg              Storage Temperature                                                      -55-150                 

  ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
              Parameter                                Symbol       Test   conditions                  MIN    MAX         UNIT
                                                                  IC=100A, IE=0            BF820       300
  Collector-base breakdown voltage                     V(BR)CBO                                                             V
                                                                                            BF822      250
                                                                  IC=1mA, IB=0             BF820       300
  Collector-emitter breakdown voltage                  V(BR)CEO                                                             V
                                                                                            BF822      250
  Emitter-base breakdown voltage                       V(BR)EBO   IE= 100A, IC=0                        5                   V

  Collector cut-off current                              ICBO     VCB=200V,IE=0                               0.01         A

  Emitter cut-off current                                IEBO     VEB= 5V,IC=0                                0.05         A

  DC current gain                                         hFE     VCE= 20V,IC=25mA                     50

  Collector-emitter saturation voltage                 VCE(sat)   IC=30mA,IB= 5mA                              0.6          V

  Transition frequency                                    fT      VCE=10V, IC= 10mA,f=100MHz           60                 MHz

  Collector output capacitance                            Cob     VCB=30V,IE=0,f=1MHz                          1.6         pF
                          BF820/BF822
                          SOT-23 Transistor(NPN)



Typical Characteristics

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