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c1815_sot-23


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                                                                                                          C1815
                                                                                             SOT-23 Transistor(NPN)

                                                                                                           SOT-23
                                              1. BASE
                                              2. EMITTER
                                              3. COLLECTOR


Features
       Power dissipation

MARKING : C1815=HF




                                                                                          Dimensions in inches and (millimeters)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

       Symbol                                      Parameter                                     Value                Units
VCBO                   Collector-Base Voltage                                                        60                    V
VCEO                   Collector-Emitter Voltage                                                     50                    V
VEBO                   Emitter-Base Voltage                                                          5                     V
IC                     Collector Current -Continuous                                              150                     mA
PC                     Collector Power Dissipation                                                200                     mW
Tj                     Junction Temperature                                                      150                       
Tstg                   Storage Temperature                                                      -55-150                     

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                               Symbol       Test    conditions       MIN              TYP   MAX       UNIT

     Collector-base breakdown voltage                   V(BR)CBO   IC= 100uA, IE=0              60                              V

     Collector-emitter breakdown voltage                V(BR)CEO   IC= 0.1mA, IB=0              50                              V

     Collector cut-off current                              ICBO   VCB=60 V, IE=0                                    0.1        A

     Collector cut-off current                              ICEO   VCE=50V, IB=0                                     0.1        uA

     Emitter cut-off current                                IEBO   VEB= 5V, IC=0                                     0.1        uA

     DC current gain                                        hFE    VCE= 6V, IC= 2mA            130                   400

     Collector-emitter saturation voltage               VCE(sat)   IC=100mA, IB= 10mA                                0.25       V

     Base-emitter saturation voltage                    VBE(sat)   IC=100mA, IB= 10mA                                 1         V

                                                                   VCE=10V, IC= 1mA,
     Transition frequency                                    fT                                 80                             MHz
                                                                   f=30MHz

     CLASSIFICATION            OF   hFE
     Rank                                               L                                                  H
     Range                                         130-200                                               200-400
                                 C1815
                           SOT-23 Transistor(NPN)


Typical Characteristics




    VCE(sat)/VBE(sat)-IC      fT-Ic



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