Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors LGE c1815_to-92
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C1815
Transistor(NPN)
TO-92
1.EMITTER
2.COLLECTOR
3.BASE
Features
Power dissipation
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 400 mW
Tj Junction Temperature 125
Tstg Storage Temperature -55-125
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE= 100uA, IC=0 5 V
Collector cut-off current ICBO VCB= 60V,IE=0 0.1 uA
Collector cut-off current ICEO VCE= 50V, IB=0 0.1 uA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 uA
DC current gain hFE VCE= 6 V, IC= 2mA 70 700
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V
VCE=10 V, IC= 1mA
Transition frequency fT 80 MHz
f=30MHz
VCB=10V,IE=0
Collector Output Capacitance Cob 3.5 pF
f=1MHz
VCE=6V,IC=0.1mA
Noise Figure NF 10 dB
f =1KHz,RG=10K
CLASSIFICATION OF hFE
Rank O Y GR BL
Range 70-140 120-240 200-400 350-700
C1815
Transistor(NPN)
Typical Characteristics
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