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                                                                                                                  C2611(NPN)
                                                                                                                   TO-126 Transistor
                                                                                                                             TO-126
                                                            1. EMITTER                                                                                2.500
                                                                                                                     7.400
                                                                                                                     7.800                      1.100 2.900
                                                                                                                                               1.500
                                                            2. COLLECTOR
                                                                                                                                       3.900
                                                                                                         3.000
                                                                                                                                       4.100
                                                            3. BASE                                      3.200
                                                                                               10.60 0                                                        0.000
                                                3                                              11.00 0                                                        0.300
                                            2
                                        1
Features                                                                                                                               2.100
                                                                                                                                       2.300
        power switching applications                                                                                           1.170
                                                                                                                               1.370
MAXIMUM RATINGS (TA=25 unless otherwise noted)                                                 15.30 0
                                                                                               15.70 0
  Symbol                 Parameter                          Value         Units
 VCBO         Collector -Base Voltage                       600            V
 VCEO         Collector-Emitter Voltage                     400            V                                                   0.660
                                                                                                                               0.860
 VEBO         Emitter-Base Voltage                            7            V                                                                     0.450
                                                                                                                                                 0.600
 IC           Collector Current -Continuous                  0.2           A                                       2.290 TYP
                                                                                                                      4.480
                                                                                                                     4.680
 PC           Collector Power Dissipation                     1            W
 TJ           Junction Temperature                          150                                Dimensions in inches and (millimeters)
 Tstg         Storage Temperature                      -55-150             

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                              Symbol            Test        conditions     MIN             TYP           MAX         UNIT

 Collector-base breakdown voltage                   V(BR)CBO        IC= 100A, IE=0               600                                            V
 Collector-emitter breakdown voltage                V(BR)CEO        IC= 1mA , IB=0               400                                            V
 Emitter-base breakdown voltage                     V(BR)EBO        IE= 100 A , IC=0              7                                             V
 Collector cut-off current                            ICBO          VCB= 600V, IE=0                                             100            A
 Collector cut-off current                            ICEO          VCE= 400V, IB=0                                             200            A
 Emitter cut-off current                              IEBO          VEB=7V, IC=0                                                100            A
                                                     hFE(1)         VCE=20V, IC=20mA              10                             40
 DC current gain
                                                     hFE(2)         VCE=10V, IC= 0.25mA           5
                                                                    IC= 50mA, IB= 10mA                                          0.5             V
 Collector-emitter saturation voltage               VCE(sat)
                                                                    IC= 100mA, IB= 20mA                                         0.6             V
 Base-emitter saturation voltage                    VBE(sat)        IC= 50mA, IB=10mA                                           1.2             V
                                                                    VCE=20V,IC=20mA
 Transition frequency                                  fT                                         8                                        MHz
                                                                    f = 1MHz
 Fall time                                             tS           IC=50mA,                                                    0.3            s
                                                                    IB1=-IB2=5mA,
 Storage time                                          tf           VCC=45V                                                     1.5            s

CLASSIFICATION OF            hFE(1)
  Rank

 Range          10-15                 15-20                       20-25                25-30                     30-35                    35-40
C2611(NPN)
TO-126 Transistor

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