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                                                                                                   CZT127
                                                                                            SOT-223 Transistor(PNP)
                                                  1. BASE
                                                  2. COLLECTOR                                       SOT-223
                           1                      3. EMITTER



Features
       Complementary to CZT122
       Silicon Power Darlington Transistors
       Low speed switching and amplifier applications


MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                  Parameter                 Value         Units
VCBO          Collector-Base Voltage                   -100        V
VCEO          Collector-Emitter Voltage                -100        V
                                                                                         Dimensions in inches and (millimeters)
VEBO          Emitter-Base Voltage                      -5         V
IC            Collector Current -Continuous             -5         A
PC            Collector Power Dissipation                1         W
Tj            Junction Temperature                     150         
Tstg          Storage Temperature                 -65-150          

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                       Symbol            Test     conditions         MIN     TYP     MAX     UNIT

 Collector-base breakdown voltage             V(BR)CBO        IC=-1m A,IE=0                 -100                      V

 Collector-emitter breakdown voltage          V(BR)CEO        IC=-30mA,IB=0                 -100                      V

 Collector cut-off current                      ICBO          VCB=-100V,IE=0                                -200     uA

 Base cut-off current                           ICEO          VCE=-50V,IB=0                                 -500     uA

 Emitter cut-off current                        IEBO          VEB=-5V,IC=0                                    -2     mA

                                                hFE(1)        VCE=-3V,IC=-0.5A              1000
 DC current gain
                                                hFE(2)        VCE=-3V,IC=-3A                1000

                                              VCE(sat)1       IC=-3A,IB=-12mA                                 -2      V
 Collector-emitter saturation voltage
                                              VCE(sat)2       IC=-5A,IB=-20mA                                 -4      V

 Base-emitter voltage                          VBE(on)        VCE=-3V,IC=-3A                                 -2.5     V

 Transition frequency                             fT          VCE=-4V,IC=-3A,f=1MHz          4                       MHz

 Collector output capacitance                   Cob           VCB=-10V, IE=0, f=1.0MHz                       200     pF
                                CZT127
                          SOT-223 Transistor(PNP)



Typical Characteristics

TypicalCharacteristics               CZT127

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