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czt32c


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                                                                                                 CZT32C
                                                                                           SOT-223 Transistor(PNP)
                                                  1. BASE                                             SOT-223
                                                  2. COLLECTOR
                        1                         3. EMITTER



Features
        Complementary to CZT31C
        Power amplifier applications up to 3.0 amps.




                                                                                      Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
       Symbol                                      Parameter                                  Value              Units
VCBO                  Collector-Base Voltage                                                   -100                V
VCEO                  Collector-Emitter Voltage                                                -100                V
VEBO                  Emitter-Base Voltage                                                      -5                 V
IC                    Collector Current -Continuous                                             -3                 A
PC                    Collector Power Dissipation                                               1                  W
Tj                    Junction Temperature                                                     150                 
Tstg                  Storage Temperature                                                     -65-150              
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
             Parameter                         Symbol            Test   conditions               MIN     TYP    MAX      UNIT

 Collector-base breakdown voltage              V(BR)CBO        IC=-1m A,IE=0                     -100                     V

 Collector-emitter breakdown voltage           V(BR)CEO        IC=-30mA,IB=0                     -100                     V

 Emitter-base breakdown voltage                V(BR)EBO        IE=-3mA,IC=0                         -5                    V

 Collector cut-off current                         ICBO        VCB=-100V,IE=0                                   -200     uA

 Base cut-off current                              ICEO        VCE=-60V,IB=0                                    -300     uA

 Emitter cut-off current                           IEBO        VEB=-5V,IC=0                                       -1     mA

                                                  hFE(1)*      VCE=-4V,IC=-1A                       25
 DC current gain
                                                  hFE(2) *     VCE=-4V,IC=-3A                       10           100

 Collector-emitter saturation voltage          VCE(sat) *      IC=-3.0A,IB=-375mA                                -1.2     V

 Base-emitter voltage                          VBE(on) *       VCE=-4V,IC=-3A                                    -1.8     V

 Transition frequency                                fT        VCE=-10V,IC=-500mA,f=1MHz             3                   MHz

* Pulsed , 2%D.C.
                                CZT32C
                          SOT-223 Transistor(PNP)



Typical Characteristics



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