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                                                                                                   D882(NPN)
                                                                                                    TO-251 Transistor


                                           1. EMITTER                                                     TO-251

                                           2. COLLECTOR

                                           3BASE


                   1   2 3

 Features
        Power dissipation

 MAXIMUM RATINGS (TA=25 unless otherwise noted)

  Symbol                Parameter                    Value          Units
 VCBO        Collector-Base Voltage                      40            V
 VCEO        Collector-Emitter Voltage                   30            V                    Dimensions in inches and (millimeters)
 VEBO        Emitter-Base Voltage                         5            V
 IC          Collector Current -Continuous                3            A
 PC          Collector Power Dissipation                 1.25          W
 TJ          Junction Temperature                        150           
 Tstg        Storage Temperature                     -55-150           


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
            Parameter                         Symbol              Test      conditions     MIN      TYP       MAX       UNIT

 Collector-base breakdown voltage            V(BR)CBO           IC = 100A, IE=0             40                           V

 Collector-emitter breakdown voltage         V(BR)CEO           IC = 10mA, IB=0             30                           V

 Emitter-base breakdown voltage              V(BR)EBO           IE= 100A, IC=0               5                           V

 Collector cut-off current                    ICBO              VCB= 40 V, IE=0                                1        

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