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                                                                                                   D882S
                                                                                                 Transistor(NPN)

                                                              1.EMITTER
                                                                                                     TO-92
                                                              2.COLLECTOR

                                                              3.BASE



 Features
       Power dissipation


MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                 Parameter                  Value          Units
VCBO          Collector-Base Voltage                   40           V
VCEO          Collector-Emitter Voltage                30           V
VEBO          Emitter-Base Voltage                      5           V
IC            Collector Current -Continuous             3           A
                                                                                        Dimensions in inches and (millimeters)
PC            Collector Power Dissipation              0.75         W
TJ            Junction Temperature                     150          
Tstg          Storage Temperature                 -55-150           

ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)

            Parameter                         Symbol            Test      conditions      MIN      TYP       MAX       UNIT
Collector-base breakdown voltage              V(BR)CBO        IC = 100A, IE=0             40                            V
Collector-emitter breakdown voltage           V(BR)CEO        IC = 10mA, IB=0             30                            V
Emitter-base breakdown voltage                V(BR)EBO        IE= 100A, IC=0               6                            V
Collector cut-off current                       ICBO          VCB= 40V, IE=0                                   1       

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