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DTA144TE/DTA144TUA/DTA144TCA
DTA144TKA/DTA144TSA
Digital Transistor(PNP)
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow
negative biasing of the input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making
device design easy
PIN CONNENCTIONS AND MARKING
DTA144TE DTA144TUA
(1) Base (1) Base
(1) Base
(2) Emitter (2) Emitter
(2) Emitter
(3) Collector (3) Collector
(3) Collector
Addreviated symbol: 96 SOT-323
SOT-523 Addreviated symbol: 96
DTA144TKA DTA144TCA
DTA114ECA
(1) Base (1) Base
(1) Base
(2) Emitter (2) Emitter
(2) Emitter
(3) Collector (3) Collector
(3) Collector
SOT-23
SOT-23-3L Addreviated symbol: 96 Addreviated symbol: 96
DTA144TSA
(1) Emitter
(2) Collector
(3) Base
TO-92S
DTA144TE/DTA144TUA/DTA144TCA
DTA144TKA/DTA144TSA
Digital Transistor(PNP)
MAXIMUM RATINGS* TA=25 unless otherwise noted
Symbol Parameter LIMITS(DTA144T) Units
E UA KA CA SA
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -100 mA
PC Collector Dissipation 150 200 300 mW
Tj Junction temperature 150
TJ, Tstg Junction and Storage Temperature -55~+150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-50A,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -0.5 uA
Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 uA
DC current gain hFE VCE=-5V,IC=-1mA 100 300 600
Collector-emitter saturation voltage VCE(sat) IC=-5mA,IB=-0.5mA -0.3 V
Transition frequency fT VCE=-10V,IE=5mA, f=100MHz 250 MHz
Imput resistor R1 32.9 47 61.1 k
Typical Characteristics
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