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                                                                                                     FMMT591
                                                                                                 SOT-23 Transistor(PNP)


                                               1. BASE
                                                                                                         SOT-23
                                               2. EMITTER
                                               3. COLLECTOR




Features
        Low equivalent on-resistance



Marking :591

MAXIMUM RATINGS (TA=25 unless otherwise noted)

    Symbol                    Parameter                         Value     Units
VCBO           Collector-Base Voltage                            -80        V               Dimensions in inches and (millimeters)

VCEO           Collector-Emitter Voltage                         -60        V
VEBO           Emitter-Base Voltage                              -5         V
IC             Collector Current -Continuous                     -1         A
PC             Collector Power Dissipation                      500       mW
Tj             Junction Temperature                             150        
Tstg           Storage Temperature                            -55-150      

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                         Symbol                   Test      conditions          MIN     TYP     MAX     UNIT

    Collector-base breakdown voltage            V(BR)CBO          IC=-100A, IE=0                       -80                      V

    Collector-emitter breakdown voltage         V(BR)CEO1         IC=-10mA, IB=0                       -60                      V

    Emitter-base breakdown voltage               V(BR)EBO         IE=-100A, IC=0                       -5                       V

    Collector cut-off current                      ICBO           VCB=-60V, IE=0                                       -0.1     A

    Emitter cut-off current                        IEBO           VEB=-4V, IC=0                                        -0.1     A

                                                  hFE(1)          VCE=-5V, IC=-1mA                    100
                                                 hFE(2) 1         VCE=-5V, IC=-500mA                  100              300
    DC current gain
                                                 hFE(3) 1         VCE=-5V, IC=-1A                      80
                                                 hFE(4) 1         VCE=-5V, IC=-2A                      15
                                                            1
                                                VCE(sat)1         IC=-500mA, IB=-50mA                                  -0.3     V
    Collector-emitter saturation voltage
                                                VCE(sat)2 1       IC=-1A, IB=-100mA                                    -0.6     V

    Base-emitter saturation voltage              VBE(sat) 1       IC=-1A, IB=-100mA                                    -1.2     V

    Base-emitter voltage                           VBE1           VCE=-5V, IC=-1A                                       -1      V

    Transition frequency                            fT            VCE=-10V,IC=-50mA,,f=100MHz          150                     MHz

    Collector output capacitance                   Cob            VCB=-10V,f=1MHz                                       10      pF
1
    Measured under pulsed conditions, Pulse width=300s, Duty cycle2%.
                             FMMT591
                          SOT-23 Transistor(PNP)



Typical Characteristics

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