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kta1266


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                                                                                                KTA1266(PNP)
                                                                                                  TO-92 Transistors


                                                                  1. EMITTER                                TO-92
                                                                  2. COLLECTOR

                                                                  3. BASE




Features
      Excellent hFE Linearity
      Low noise
      Complementary to KTC3198

MAXIMUM RATINGS (TA=25 unless otherwise noted)
  Symbol                  Parameter                  Value          Units
 VCBO          Collector-Base Voltage                    -50          V
 VCEO          Collector-Emitter Voltage                 -50          V
 VEBO          Emitter-Base Voltage                       -5          V                    Dimensions in inches and (millimeters)
 IC            Collector Current -Continuous         -0.15            A
 PC            Collector Power Dissipation               625         mW
 Tj            Junction Temperature                      150          
 Tstg          Storage Temperature                  -55-150           

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

           Parameter                             Symbol               Test       conditions           MIN     TYP     MAX     UNIT
Collector-base breakdown voltage                 V(BR)CBO      IC =-100A, IE=0                        -50                      V
Collector-emitter breakdown voltage              V(BR)CEO      IC=-1mA, IB=0                          -50                      V
Emitter-base breakdown voltage                   V(BR)EBO      IE=-100A, IC=0                          -5                      V
Collector cut-off current                          ICBO        VCB=-50V, IE=0                                         -0.1     A
Emitter cut-off current                            IEBO        VEB=-5V, IC=0                                          -0.1     A
                                                  hFE(1)       VCE=-6V, IC=-2mA                       70              400
DC current gain
                                                  hFE(2)       VCE=-6V, IC=-150mA                     25
Collector-emitter saturation voltage             VCE(sat)      IC=-100mA, IB=-10mA                                    -0.3     V
Base-emitter saturation voltage                  VBE(sat)      IC=-100mA, IB=-10mA                                    -1.1     V
Transition frequency                                fT         VCE=-10V, IC=-1mA                      80                      MHz
Collector output capacitance                       Cob         VCB=-10V, IE=0, f=1MHz                                    7     pF
                                                               VCE=-6V, Ic=-0.1mA,
Noise figure                                       NF                                                                    10    dB
                                                               f=1KHZ, Rg=10K
CLASSIFICATION OF            hFE(1)
Rank                                         O                                       Y                              GR

Range                                   70-140                                   120-240                        200-400

Marking
                          KTA1266(PNP)
                           TO-92 Transistors


Typical Characteristics



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