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ktc3875


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                                                                                                  KTC3875
                                                                                            SOT-23 Transistor(NPN)
                                                                                                  SOT-23
                                        1. BASE
                                        2. EMITTER
                                        3. COLLECTOR




Features
      High hFE: hFE=70-700
      Low noise : NF=1dB(Typ),10dB(Max)
      Complementary to KTA1504


                                                                                       Dimensions in inches and (millimeters)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

        Symbol                Parameter                       Value                Units
 VCBO               Collector-Base Voltage                      60                     V
 VCEO               Collector-Emitter Voltage                   50                     V
 VEBO               Emitter-Base Voltage                        5                      V
 IC                 Collector Current -Continuous              150                     mA
 PC                 Collector Power Dissipation                150                     mW
 Tj                 Junction Temperature                       150                     
 Tstg               Storage Temperature                      -55-150                   

 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                 Parameter                   Symbol              Test     conditions              MIN    TYP    MAX      UNIT

 Collector-base breakdown voltage            V(BR)CBO    IC=100A,IE=0                             60                      V

 Collector-emitter breakdown voltage         V(BR)CEO    IC= 1mA, IB=0                            50                      V

 Emitter-base breakdown voltage              V(BR)EBO    IE= 100A, IC=0                            5                      V

 Collector cut-off current                        ICBO   VCB= 60V, IE=0                                          0.1      A

 Emitter cut-off current                          IEBO   VEB= 5V, IC=0                                           0.1      A

 DC current gain                                  hFE    VCE= 6V, IC= 2mA                         70             700

 Collector-emitter saturation voltage        VCE(sat)    IC=100mA, IB= 10mA                              0.1     0.25     V

 base-emitter saturation voltage             VBE(sat)    IC=100mA, IB= 10mA                                       1       V

 Transition frequency                              fT    VCE=10V, IC= 1mA                         80                     MHz

 Collector output capacitance                     Cob    VCB=10V,IE=0,f=1MHZ                             2.0     3.5      pF

 Noise figure                                     NF     VCE=6V,IC=0.1mA,Rg=10k,f=1KHZ                   1.0      10      dB

 CLASSIFICATION OF hFE
  Rank                                  O                        Y                          GR                    BL
  Range                             70-140                   120-240                    200-400                350-700
  Marking                             ALO                      ALY                          ALG                  ALL
                             KTC3875
                          SOT-23 Transistor(NPN)

Typical Characteristics
   KTC3875
SOT-23 Transistor(NPN)



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