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                                                                                                          KTC3876
                                                                                                       SOT-23 Transistor(NPN)

                                                                                                             SOT-23
                                          1. BASE
                                          2. EMITTER
                                          3. COLLECTOR




Features
        High hFE: hFE=70-400
        Complementary to KTA1505




MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                                Dimensions in inches and (millimeters)
  Symbol                Parameter                          Value         Units
 VCBO         Collector-Base Voltage                          35             V
 VCEO         Collector-Emitter Voltage                       30             V
 VEBO         Emitter-Base Voltage                            5              V
 IC           Collector Current -Continuous                   500           mA
 PC           Collector Power Dissipation                     200           mW
 Tj           Junction Temperature                            150           
 Tstg         Storage Temperature                         -55-150           

 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                      Symbol                        Test   conditions              MIN    TYP      MAX    UNIT

 Collector-base breakdown voltage             V(BR)CBO            IC=100A, IE=0                             35                      V

 Collector-emitter breakdown voltage          V(BR)CEO            IC= 1mA, IB=0                             30                      V

 Emitter-base breakdown voltage               V(BR)EBO            IE= 100A, IC=0                            5                       V

 Collector cut-off current                      ICBO              VCB= 35V, IE=0                                            0.1   A
 Emitter cut-off current                        IEBO              VEB= 5V, IC=0                                             0.1   A
                                                    hFE1          VCE=1V, IC= 100mA                         70             400
 DC current gain                                                  VCE=6V, IC= 400mA                O        25
                                                    hFE2
                                                                                                   Y        40
 Collector-emitter saturation voltage         VCE(sat)            IC=100mA, IB= 10mA                                       0.25     V

 base-emitter voltage                           VBE               VCE=1V, IB= 100mA                                         1       V

 Transition frequency                               fT            VCE=6V,    IC=20mA                              300             MHz

 Collector output capacitance                       Cob           VCB=6V,IE=0,f=1MHZ                                7              pF

 CLASSIFICATION OF hFE
  Rank                                                    O                              Y                              GR(G)
  Range                                             70-140                             120-240                          200-400
  Marking                                                WO                             WY                               WG
                             KTC3876
                          SOT-23 Transistor(NPN)


Typical Characteristics

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