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                                                                                                KTC3192(NPN)
                                                                                                     TO-92 Transistors


                                                                   1. COLLECTOR
                                                                                                          TO-92
                                                                   2. EMITTER

                                                                   3. BASE




Features
      High power gain: Gpe=29dB(Typ)(f=10.7MHZ)

MAXIMUM RATINGS (TA=25 unless otherwise noted)
  Symbol                Parameter                        Value        Units
 VCBO         Collector-Base Voltage                      35              V
 VCEO         Collector-Emitter Voltage                   30              V
 VEBO         Emitter-Base Voltage                        4               V
 IC           Collector Current -Continuous               50           mA
                                                                                            Dimensions in inches and (millimeters)
 PC           Collector Power Dissipation                625           mW
 Tj           Junction Temperature                       150              
 Tstg         Storage Temperature                       -55-150           

 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                         Symbol               Test       conditions      MIN       TYP     MAX      UNIT

 Collector-base breakdown voltage             V(BR)CBO           IC= 100A, IE=0                35                          V

 Collector-emitter breakdown voltage          V(BR)CEO           IC= 1mA , IB=0                30                          V

 Emitter-base breakdown voltage               V(BR)EBO           IE= 100A, IC=0                 4                          V

 Collector cut-off current                      ICBO             VCB= 35V ,     IE=0                             0.1       A

 Emitter cut-off current                        IEBO             VEB= 4V ,      IC=0                             1.0       A

 DC current gain                                   hFE           VCE=12 V,      IC= 2mA        40                240

 Collector-emitter saturation voltage          VCE(sat)          IC= 10mA, IB= 1mA                               0.4       V

 Base-emitter saturation voltage               VBE(sat)          IC= 10mA, IB= 1mA                               1.0       V

 Transition frequency                              fT            VCE= 10 V, IC= 1mA            100               400      MHz

 Collector output capacitance                   Cob              VCB=10 V,IE=0,f=1MHZ          1.4               3.2       pF

                                                                 VCE=10V,IC=1mA,
 Collector-base time constant                  Cc.rbb'                                         10                 50       pS
                                                                 f=30MHZ
                                                                 VCC=6V,IC=1mA,
 Power gain                                     Gpe                                            27                 33       dB
                                                                 f=10.7MHZ
 CLASSIFICATION OF hFE(1)
  Rank                                         R                                       O                          Y

  Range                                     40-80                                  70-140                      120-240
                          KTC3192(NPN)
                           TO-92 Transistors


Typical Characteristics
KTC3192(NPN)
 TO-92 Transistors

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