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                                                                                                  KTC3195
                                                                                            TO-92S Transistor (NPN)

                                                     1. EMITTER
                                                                                                     TO-92S

                                                     2. COLLECTOR


                               123                   3. BASE
Features
       Small reverse transfer capacitance Cre=0.7pF(Typ)
       Low noise Figure: NF=2.5dB(Typ.)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                    Parameter                       Value      Units
VCBO        Collector-Base Voltage                           40        V
VCEO        Collector-Emitter Voltage                        30        V
VEBO        Emitter-Base Voltage                             4         V
IC          Collector Current -Continuous                    20        mA
PC          Collector Power Dissipation                     400       mW
TJ          Junction Temperature                            150                         Dimensions in inches and (millimeters)
Tstg        Storage Temperature                            -55-150     

 ELECTRICAL CHARACTERISTICS (Tamb=25                                 unless    otherwise     specified)

            Parameter                           Symbol               Test     conditions           MIN     TYP       MAX   UNIT

 Collector-base breakdown voltage               V(BR)CBO      IC=100A, IE=0                        40                       V

 Collector-emitter breakdown voltage            V(BR)CEO      IC=1mA, IB=0                         30                       V

 Emitter-base breakdown voltage                 V(BR)EBO      IE=100A, IC=0                         4                       V

 Collector cut-off current                        ICBO        VCB=40V, IE=0                                          0.5    A

 Emitter cut-off current                          IEBO        VEB=4V, IC=0                                           0.5    A

 DC current gain                                  hFE(1)      VCE=6V, IC=1mA                       40                200

 Transition frequency                               fT        VCE=6V, IC=1mA                       300     550             MHz

 Reverse Transfer capacitance                      Cre        VCB=6V, IE=0, f=1MHz                         0.7              pF

 Noise figure                                      NF                                                      2.5        5     dB
                                                              VCE=6V, IC=1mA,f=100MHZ
 Power Gain                                       Gpe                                                       18              dB


 CLASSIFICATION OF            hFE(1)
 Rank                                       R                                    O                               Y

 Range                                    40-80                                70-140                        100-200

 Marking
                              KTC3195
                          TO-92S Transistor (NPN)


Typical Characteristics

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