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                                                                                          KTC3197(NPN)
                                                                                             TO-92 Transistors


                                                              1. EMITTER                               TO-92
                                                              2. COLLECTOR

                                                              3. BASE




Features
       High Gain: Gpe=33dB(Typ) (f=45MHZ).
       Good linearity of hFE

MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                 Parameter                Value          Units
VCBO         Collector-Base Voltage                   30            V
VCEO         Collector-Emitter Voltage                25            V
VEBO         Emitter-Base Voltage                      4            V
IC           Collector Current -Continuous            50         mA
PC           Collector power dissipation             625        mW                   Dimensions in inches and (millimeters)

TJ           Junction Temperature                    150            
Tstg         Storage Temperature                -55-150             

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                        Symbol          Test       conditions              MIN      TYP    MAX     UNIT

Collector-base breakdown voltage             V(BR)CBO      IC=1mA,IE=0                           30                       V

Collector-emitter breakdown voltage          V(BR)CEO      IC=10mA,IB=0                          25                       V

Emitter-base breakdown voltage               V(BR)EBO      IE=1mA,IC=0                            4                       V

Collector cut-off current                      ICBO        VCB=30V,IE=0                                          0.1      A

Emitter cut-off current                        IEBO        VEB=3V,IC=0                                           0.1      A

DC current gain                                hFE         VCE=12.5V,IC=12.5mA                   20              200

Collector-emitter saturation voltage         VCE(sat)      IC=15mA,IB=1.5mA                                      0.2      V

Base-Emitter saturation voltage              VBE(sat)      IC=15mA,IB=1.5mA                                      1.5      V

Collector output capacitance                   Cob         VCB=10V,IE=0,f=1MHZ                   0.8              2       pF

Collector-base time constant                  Cc.rbb       VCB=10V,IE=-1mA, f=30MHZ                              25       pS

Transition frequency                            fT         VCE=12.5V,IC=12.5mA                  300                      MHZ

Power gain                                    Gpe          VCE=12.5V,IE=12.5mA, f=45MHZ          28              36       dB
                          KTC3197(NPN)
                           TO-92 Transistors



Typical Characteristics

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