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KTC4375
SOT-89 Transistor(NPN)
1. BASE
1 2. COLLECTOR SOT-89
2 4.6
4.4
B
1.6
3 3. EMITTER 1.4
1.8
1.4
Features 2.6 4.25
2.4 3.75
0.8
Low voltage MIN
0.53
0.44 0.48 0.40
0.13 B 2x)
0.37 0.35
MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.5
3.0
Symbol Parameter Value Units Dimensions in inches and (millimeters)
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1.5 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V
Collector cut-off current ICBO VCB=30V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
DC current gain hFE VCE=2V,IC=0.5A 100 320
Collector-emitter saturation voltage VCE(sat) IC=1.5A,IB=30mA 2 V
Base-emitter voltage VBE VCE=2V,IC=0.5A 1 V
Transition frequency fT VCE=2V,IC=500mA 120 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 40 pF
CLASSIFICATION OF hFE(1)
Rank O Y
Range 100-200 160-320
Marking GO GY
KTC4375
SOT-89 Transistor(NPN)
Typical Characteristics
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