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KTC4377
SOT-89 Transistor(NPN)
1. BASE
1 2. COLLECTOR SOT-89
2 4.6
B
4.4
3. EMITTER 1.6
3 1.4
1.8
1.4
Features 2.6 4.25
2.4 3.75
Low voltage 0.8
MIN
0.53
0.44 0.48 0.40
0.13 B 2x)
0.37 0.35
MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.5
3.0
Symbol Parameter Value Units Dimensions in inches and (millimeters)
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 10 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 2 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 10 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 6 V
Collector cut-off current ICBO VCB=30V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=6V,IC=0 0.1 A
hFE(1) VCE=1V,IC=0.5A 140 600
DC current gain
hFE(2) VCE=1V,IC=2A 70
Collector-emitter saturation voltage VCE(sat) IC=2A,IB=50mA 0.5 V
Base-emitter voltage VBE VCE=1V,IC=2A 1.5 V
Transition frequency fT VCE=1V,IC=0.5A 150 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 27 pF
CLASSIFICATION OF hFE(1)
Rank A B C D
Range 140-240 200-330 300-450 420-600
Marking SA SB SC SD
KTC4377
SOT-89 Transistor(NPN)
Typical Characteristics
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