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                                                                                                KTD1304
                                                                                           SOT-23 Transistor(NPN)
                                                                                                  SOT-23
                                         1. BASE
                                         2. EMITTER
                                         3.COLLECTOR




Features
      High emitter-base voltage:VEBO=12V(Min)
      low on resistance:Ron=0.6(max)(IB=1mA)

MARKING: MAX

                                                                                       Dimensions in inches and (millimeters)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

  Symbol                Parameter                       Value                 Units
 VCBO        Collector-Base Voltage                         25                     V
 VCEO        Collector-Emitter Voltage                      20                     V
 VEBO        Emitter-Base Voltage                           12                     V
 IC          Collector Current -Continuous                  0.3                    A
 PC          Collector Power Dissipation                    0.2                  W
 Tj          Junction Temperature                        150                     
 Tstg        Storage Temperature                       -55-150                   

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
            Parameter                              Symbol           Test   conditions         MIN      TYP      MAX    UNIT

 Collector-base breakdown voltage                  V(BR)CBO       IC=100A,   IE=0              25                        V

 Collector-emitter breakdown voltage               V(BR)CEO       IC=1mA, IB=0                 20                        V

 Emitter-base breakdown voltage                    V(BR)EBO       IE=100A, IC=0                12                        V

 Collector cut-off current                            ICBO        VCB=25 V, IE=0                                0.1     A

 Emitter cut-off current                              IEBO        VEB=12V, IC=0                                 0.1     A

                                                   hFE(FOR)       VCE=2V, IC=4 mA             200               1000
 DC current gain
                                                   hFE(REV)       VCE= 2V, IC= 4mA             20

 Collector-emitter saturation voltage              VCE(sat)       IC= 100mA, IB=10 mA                           0.25     V

 Base-emitter saturation voltage                   VBE(sat)       IC= 100mA, IB=10mA                             1       V

                                                                  VCE=10V, IC= 1mA
 Transition frequency                                  fT                                               60              MHz
                                                                  f=100MHz
 output capacitance                                   Cob         VCB=10V,IE=0,f=1MHz                   10              pF
 On resistance                                        R(on)       Vin=0.3V,IB=1mA,f=1KHZ                0.6              
                             KTD1304
                          SOT-23 Transistor(NPN)


Typical characteristics

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