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>> Download ksc2316_to-92l documenatation <<Text preview - extract from the document KSC2316
TO-92L Transistor (NPN)
TO-92L
1. EMITTER
4.700
5.100
2. COLLECTOR
3. BASE 7.800
8.200
3
2 0.600
1
Features 0.800
Driver stage amplifier
0.350
Complement to KSA916 0.550
13.800
14.200
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
1.270 TYP
VCBO Collector-Base Voltage 120 V
2.440
VCEO Collector-Emitter Voltage 120 V 2.640
0.000 1.600
VEBO Emitter-Base Voltage 5 V 0.300
IC Collector Current -Continuous 800 mA 0.350
3.700 0.450
PC Collector Power Dissipation 900 mW 4.100 1.280
1.580
TJ Junction Temperature 150
4.000
Tstg Storage Temperature -55-150
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 120 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 120 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V
Collector cut-off current ICBO VCB=120V, IE=0 0.1
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