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KSC2331
TO-92L Transistor (NPN)
TO-92L
1.EMITTER 4.700
5.100
2.COLLECTOR
7.800
8.200
3.BASE
3 0.600
2
1 0.800
Features
Complement to KSA931 0.350
0.550
High collector-Base Voltage: VCBO=80V 13.800
14.200
Collector current: IC=700mA
Collector dissipation: PC=1W
MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.270 TYP
2.440
2.640
Symbol Parameter Value Units
0.000 1.600
VCBO Collector-Base Voltage 80 V 0.300
VCEO Collector-Emitter Voltage 60 V 0.350
3.700 0.450
VEBO Emitter-Base Voltage 8 V 4.100 1.280
Collector Current -Continuous 700 mA 1.580
IC
4.000
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150 Dimensions in inches and (millimeters)
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A,IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA,IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE= 10A,IC=0 8 V
Collector cut-off current ICBO VCB=60V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
DC current gain hFE VCE=2V,IC=50mA 40 240
Collector-emitter saturation voltage VCE(sat) IC=500m A,IB=50mA 0.7 V
Base-emitter voltage VBE(sat) IC=500mA,IB=50mA 1.2 V
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 8 pF
Transition frequency fT VCE=10V,IC=50mA 30 MHz
CLASSIFICATION OF hFE
Rank R O Y
Range 40-80 70-140 120-240
KSC2331
TO-92L Transistor (NPN)
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