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                                                                                               PZTA42
                                                                                       SOT-223 Transistor(NPN)

                                          1. BASE
                                                                                                    SOT-223
                                          2. COLLECTOR
                    1                     3. EMITTER



Features
       High breakdown voltage
       Low collector-emitter saturation voltage
       Complementary type: PZTA92(PNP)


MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                 Parameter                Value         Units
VCBO        Collector-Base Voltage                   300            V
VCEO        Collector-Emitter Voltage                300            V
                                                                                     Dimensions in inches and (millimeters)
VEBO        Emitter-Base Voltage                      6             V
IC          Collector Current -Continuous            0.5            A
PC          Collector Power Dissipation               1             W
Tj          Junction Temperature                     150            
Tstg        Storage Temperature                 -55-150             

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

           Parameter                        Symbol           Test       conditions             MIN     TYP     MAX     UNIT

Collector-base breakdown voltage            V(BR)CBO       IC=100A,IE=0                        300                       V

Collector-emitter breakdown voltage         V(BR)CEO       IC=1mA,IB=0                         300                       V

Emitter-base breakdown voltage              V(BR)EBO       IE=100A,IC=0                         6                        V

Collector cut-off current                     ICBO         VCB=200V,IE=0                                        0.1     A

Emitter cut-off current                       IEBO         VEB=6V,IC=0                                          0.1     A

                                             hFE(1)        VCE=10V,IC=1mA                       25

DC current gain                              hFE(2)        VCE=10V,IC=10mA                      40

                                             hFE(3)        VCE=10V,IC=30mA                      40

Collector-emitter saturation voltage         VCE(sat)      IC=20mA,IB=2mA                                       0.5      V

Base-emitter saturation voltage              VBE(sat)      IC=20mA,IB=2mA                                       0.9      V

Transition frequency                            fT         VCE=20V,IC=10mA,f=100MHz             50                     MHz

Collector output capacitance                   Cob         VCB=20V,IE=0,f=1MHz                                   3      pF
                                PZTA42
                          SOT-223 Transistor(NPN)


Typical Characteristics

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