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                                                                                               PZTA44
                                                                                       SOT-223 Transistor(NPN)

                                            1. BASE
                                            2. COLLECTOR                                        SOT-223
                      1
                                            3. EMITTER



Features
        Low current : 300mA(max)
        High voltage: VCEO=400V



MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                   Parameter               Value        Units
 VCBO       Collector-Base Voltage                    500        V
 VCEO       Collector-Emitter Voltage                 400        V
 VEBO       Emitter-Base Voltage                       6         V                  Dimensions in inches and (millimeters)

 IC         Collector Current -Continuous             300       mA
 PC         Collector Power Dissipation            1000         mW
 Tj         Junction Temperature                      150        
 Tstg       Storage Temperature                  -65-150         

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                         Symbol          Test     conditions              MIN     TYP     MAX     UNIT

Collector-base breakdown voltage              V(BR)CBO      IC=100A,IE=0                       500                      V

Collector-emitter breakdown voltage           V(BR)CEO      IC=1mA,IB=0                        400                      V

Emitter-base breakdown voltage                V(BR)EBO      IE=100A,IC=0                        6                       V

Collector cut-off current                       ICBO        VCB=400V,IE=0                                      0.1      A

Emitter cut-off current                         IEBO        VEB=4V,IC=0                                        0.1      A

                                                hFE(1)      VCE=10V,IC=1mA                     40

                                                hFE(2)      VCE=10V,IC=10mA                    50              200
DC current gain
                                                hFE(3)      VCE=10V,IC=50mA                    45

                                                hFE(4)      VCE=10V,IC=100mA                   40

                                               VCE(sat)     IC=1mA,IB=0.1mA                                    0.4      V

Collector-emitter saturation voltage           VCE(sat)     IC=10mA,IB=1mA                                     0.5      V

                                               VCE(sat)     IC=50mA,IB=5mA                                     0.75     V

Base-emitter saturation voltage                VBE(sat)     IC=10mA,IB=1mA                                     0.85     V

Transition frequency                              fT        VCE=10V,IC=10mA,f=100MHz           20                      MHz

Collector   capacitance                          CC         VCB=20V,IE=0,f=1MHz                                 7       pF

Emitter capacitance                              Ce         VEB=0.5V,IC=0,f=1MHz                               180      pF
                                PZTA44
                          SOT-223 Transistor(NPN)


Typical characteristics

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