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                                                                                                      S8550
                                                                                          SOT-23 Transistor(PNP)
                                                                                                  SOT-23
                                            1. BASE
                                            2. EMITTER
                                            3. COLLECTOR



Features
      Complimentary to S8050
      Collector current: IC=0.5A

MARKING :        2TY
                                                                                       Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)

        Symbol                                 Parameter                                      Value               Units
 VCBO              Collector-Base Voltage                                                       -40                   V
 VCEO              Collector-Emitter Voltage                                                    -25                   V
 VEBO              Emitter-Base Voltage                                                         -5                    V
 IC                Collector Current -Continuous                                               -0.5                   A
 PC                Collector Power Dissipation                                                  0.3                   W
 Tj                Junction Temperature                                                        150                    
 Tstg              Storage Temperature                                                        -55-150                 

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
             Parameter                                      Symbol      Test    conditions               MIN   MAX        UNIT

 Collector-base breakdown voltage                          V(BR)CBO   IC = -100A,      IE=0              -40              V

 Collector-emitter breakdown voltage                       V(BR)CEO   IC =-1mA, IB=0                     -25              V

 Emitter-base breakdown voltage                            V(BR)EBO   IE= -100A, IC=0                     -5              V

 Collector cut-off current                                   ICBO     VCB= -40V, IE=0                          -0.1       A

 Collector cut-off current                                   ICEO     VCE= -20V, IB=0                          -0.1       A

 Emitter cut-off current                                     IEBO     VEB= -3V, IC=0                           -0.1       A

                                                            hFE(1)    VCE= -1V, IC= -50mA                120   350
 DC current gain
                                                            hFE(2)    VCE= -1V, IC= -500mA               50

 Collector-emitter saturation voltage                      VCE(sat)   IC=-500mA, IB= -50mA                     -0.6       V

 Base-emitter saturation voltage                           VBE(sat)   IC=-500mA, IB= -50mA                     -1.2       V

                                                                      VCE= -6V, IC= -20mA
 Transition frequency                                       fT                                           150              MHz
                                                                      f=30MHz
 CLASSIFICATION OF           hFE(1)
 Rank                                          L                                                     H
 Range                                      120-200                                            200-350
                                 S8550
                          SOT-23 Transistor(PNP)


Typical Characteristics

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