Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors LGE s9014_to-92
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S9014(NPN)
TO-92 Bipolar Transistors
1. EMITTER TO-92
2. BASE
3. COLLECTOR
Features
High total power dissipation.(PC=0.45W)
High hFE and good linearity
Complementary to S9015
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.1 A
PC Collector Power Dissipation 0.45 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 45 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=50V, IE=0 0.1 A
Collector cut-off current ICEO VCE=35V, IB=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
DC current gain hFE VCE=5V, IC= 1mA 60 1000
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1 V
VCE=5V, IC= 10mA
Transition frequency fT 150 MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank A B C D
Range 60-150 100-300 200-600 400-1000
S9014(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
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