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s9015_sot-23


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                                                                                              S9015
                                                                                      SOT-23 Transistor(PNP)
                                                                                                SOT-23


                                          1. BASE
                                          2. EMITTER
                                          3. COLLECTOR




Features
      Complementary to S9014

MARKING: M6


                                                                                   Dimensions in inches and (millimeters)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

        Symbol                                  Parameter                                      Value                 Units
 VCBO              Collector-Base Voltage                                                          -50                    V
 VCEO              Collector-Emitter Voltage                                                    -45                       V
 VEBO              Emitter-Base Voltage                                                            -5                     V
 IC                Collector Current -Continuous                                                -0.1                      A
 PC                Collector Power Dissipation                                                     0.2                    W
 Tj                Junction Temperature                                                         150                       
 Tstg              Storage Temperature                                                        -55-150                     
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
             Parameter                              Symbol       Test     conditions         MIN             TYP   MAX        UNIT

 Collector-base breakdown voltage                   V(BR)CBO   IC= -100A, IE=0                -50                              V

 Collector-emitter breakdown voltage                V(BR)CEO   IC = -0.1mA, IB=0              -45                              V

 Emitter-base breakdown voltage                     V(BR)EBO   IE=-100A, IC=0                 -5                               V

 Collector cut-off current                              ICBO   VCB=-50 V, IE=0                                     -0.1        A

 Emitter cut-off current                                IEBO   VEB= -5V, IC=0                                      -0.1        A

 DC current gain                                        hFE    VCE=-5V, IC= -1mA              200                  1000

 Collector-emitter saturation voltage               VCE(sat)   IC=-100mA, IB= -10mA                                -0.3        V

 Base-emitter saturation voltage                    VBE(sat)   IC=-100mA, IB=-10mA                                  -1         V

                                                               VCE=-5V,   IC= -10mA
 Transition frequency                                    fT                                   150                             MHz
                                                               f=30MHz
CLASSIFICATION OF            hFE
 Rank                                               L                                                    H
 Range                                         200-450                                              450-1000
                                S9015
                          SOT-23 Transistor(PNP)


Typical Characteristics



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