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                                                                                               S9015(PNP)
                                                                                            TO-92 Bipolar Transistors


                                                             1. EMITTER                                 TO-92
                                                             2. BASE

                                                             3. COLLECTOR




Features
       High total power dissipation.(PC=0.45W)
       High hFE and good linearity
       Complementary to S9014



MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                 Parameter                Value           Units
VCBO          Collector-Base Voltage              -50             V
VCEO          Collector-Emitter Voltage           -45             V
VEBO          Emitter-Base Voltage                    -5          V
                                                                                        Dimensions in inches and (millimeters)
IC            Collector Current -Continuous       -0.1            A
PC            Collector Power Dissipation         0.45            W
Tj            Junction Temperature                150             
Tstg          Storage Temperature               -55-150           

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                          Symbol            Test     conditions          MIN        TYP     MAX       UNIT

Collector-base breakdown voltage              V(BR)CBO        IC= -100A,      IE=0             -50                         V

Collector-emitter breakdown voltage           V(BR)CEO        IC= -1mA, IB=0                   -45                         V

Emitter-base breakdown voltage                V(BR)EBO        IE=-100A, IC=0                       -5                      V

Collector cut-off current                       ICBO          VCB=-50V, IE=0                                     -0.05     A

Emitter cut-off current                         IEBO          VEB= -5V, IC=0                                     -0.05     A

DC current gain                                 hFE           VCE=-5V, IC= -1mA               60                 1000

Collector-emitter saturation voltage          VCE(sat)        IC=-100mA, IB= -10mA                                -0.3     V

Base-emitter saturation voltage               VBE(sat)        IC=-100mA, IB=-10mA                                 -1       V

                                                              VCE=-5V,      IC= -10mA
Transition frequency                             fT                                            100                         MHz
                                                              f=30MHz
CLASSIFICATION OF           hFE(1)
 Rank                                A                       B                            C                        D
 Range                           60-150                    100-300                     200-600                  400-1000
                            S9015(PNP)
                          TO-92 Bipolar Transistors


Typical Characteristics

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