Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors LGE s9012_to-92
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S9012(PNP)
TO-92 Bipolar Transistors
1. EMITTER TO-92
2. BASE
3. COLLECTOR
Features
Complementary to S9013
Excellent hFE linearity
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA Dimensions in inches and (millimeters)
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA,IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A
Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
hFE(1) VCE=-4V,IC=-1mA 64 400
DC current gain
hFE(2) VCE=-1V, IC= -500mA 40
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V
VCE=-6V, IC= -20mA
Transition frequency fT 150 MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank D E F G H I J
Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400
S9012(PNP)
TO-92 Bipolar Transistors
Typical Characteristics
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