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                                                                                                          S9013
                                                                                                 SOT-23 Transistor(NPN)
                                                                                                        SOT-23
                                             1. BASE
                                             2. EMITTER
                                             3. COLLECTOR




Features
        Complementary to S9012
        Excellent hFE linearity

MARKING: J3

                                                                                              Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)

       Symbol                         Parameter                         Value           Units
VCBO                Collector-Base Voltage                                  40            V
VCEO                Collector-Emitter Voltage                               25            V
VEBO                Emitter-Base Voltage                                     5            V
IC                  Collector Current -Continuous                           500          mA
PC                  Collector Power Dissipation                             300          mW
Tj                  Junction Temperature                                    150           
Tstg                Storage Temperature                                -55-150            
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                Parameter                               Symbol       Test        conditions       MIN        TYP       MAX    UNIT

     Collector-base breakdown voltage                  V(BR)CBO    IC= 100A, IE=0                   40                          V

     Collector-emitter breakdown voltage               V(BR)CEO    IC= 0.1mA, IB=0                  25                          V

     Emitter-base breakdown voltage                    V(BR)EBO    IE=100A, IC=0                    5                           V

     Collector cut-off current                            ICBO     VCB=40V, IE=0                                       0.1      A

     Collector cut-off current                            ICEO     VCE=20V, IB=0                                       0.1      A

     Emitter cut-off current                              IEBO     VEB= 5V, IC=0                                       0.1      A

                                                          hFE(1)   VCE=1V, IC= 50mA                120                 400
     DC current gain
                                                          hFE(2)   VCE=1V, IC=500mA                 40

     Collector-emitter saturation voltage              VCE(sat)    IC=500mA, IB= 50mA                                  0.6      V

     Base-emitter saturation voltage                   VBE(sat)    IC=500mA, IB= 50mA                                  1.2      V
                                                                   VCE=6V,       IC= 20mA
     Transition frequency                                 fT                                       150                         MHz
                                                                   f=30MHz
 CLASSIFICATION OF               hFE(1)
    Rank                             L                                       H                                     J
        Range                    120-200                               200-350                                 300-400
                                S9013
                          SOT-23 Transistor(NPN)


Typical Characteristics

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