Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors LGE s9013_to-92
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S9013
Transistor(NPN)
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
Features
Complementary to S9012
Excellent hFE linearity
MAXIMUM RATINGS TA=25 unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 500 mA
PC Collector Dissipation 625 mW Dimensions in inches and (millimeters)
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A , IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A , IC=0 5 V
Collector cut-off current ICBO VCB= 40V , IE=0 0.1 A
Collector cut-off current ICEO VCE=20V , IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
hFE(1) VCE=1V, IC=50mA 64 400
DC current gain
hFE(2) VCE=1V, IC= 500mA 40
Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.6 V
Base-emitter voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V
Transition frequency fT VCE=6V,IC=20mA,f=30MHz 150 MHz
CLASSIFICATION OF hFE(1)
Rank D E F G H I J
Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400
S9013
Transistor(NPN)
Typical Characteristics
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