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                                                                                                   STB1277(PNP)
                                                                                                  TO-92 Bipolar Transistors


                                                                      1. EMITTER                              TO-92
                                                                      2. COLLECTOR

                                                                      3. BASE



Features
          Audio power amplifier
          High current application
          High current : IC=-2A
          Complementary pair with STD1862

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol                  Parameter              Value        Units
VCBO           Collector-Base Voltage            -30            V
VCEO           Collector-Emitter Voltage         -30            V
VEBO           Emitter-Base Voltage              -5             V                            Dimensions in inches and (millimeters)
IC             Collector Current -Continuous     -2             A
PC             Collector Power Dissipation      625            mW
TJ             Junction Temperature             150             
Tstg           Storage Temperature             -55-150          

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

                  Parameter                            Symbol         Test      conditions         MIN      TYP       MAX     UNIT
     Collector-base breakdown voltage                    VCBO       IC= -100uA, IE=0                -30                          V
     Collector-emitter breakdown voltage                 VCEO       IC= -1mA , IB=0                 -30                         V
     Emitter-base breakdown voltage                      VEBO       IE= -1mA, IC=0                  -5                          V
     Collector cut-off current                           ICBO       VCB= -30 V, IE=0                                  -0.1      uA
     Emitter cut-off current                             IEBO       VEB= -5V, IC=0                                    -0.1      uA
     DC current gain                                      hFE       VCE=-2V, IC= -500mA             100               320
     Collector-emitter saturation voltage               VCE(sat)    IC=-2A, IB= -0.2A                                 -0.8       V
     Base-emitter on voltage                            VBE(on)     VCE=-2V, IC= -500mA                                -1        V
     Transition frequency                                 fT        VCE= -5V, IC= -50mA                      170               MHz
     Collector Output Capacitance                        Cob        VCB=-10V,IE=0,f=1MHZ                      48                pF



CLASSIFICATION hFE
       Rank                                               O                                                  Y
       Range                                           100-200                                            160-320
                          STB1277(PNP)
                          TO-92 Bipolar Transistors


Typical Characteristics

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