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                                                                                                      STD123S
                                                                                              SOT-23 Transistor(NPN)

                                                                                                          SOT-23
                                            1. BASE

                                            2. EMITTER

                                            3. COLLECTOR




Features
         Low saturation medium current application
         Extremely low collector saturation voltage
         Suitable for low voltage large current drivers
         High DC current gain and large current capability
         Low on resistance : RON=0.6(Max.) (IB=1mA)

Marking:123
                                                                                         Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)

       Symbol                                      Parameter                                     Value               Units
VCBO                   Collector-Base Voltage                                                        20                  V
VCEO                   Collector-Emitter Voltage                                                     15                  V
VEBO                   Emitter-Base Voltage                                                       6.5                    V
IC                     Collector Current -Continuous                                                  1                  A
PC                     Collector Power Dissipation                                                350                mW
Tj                     Junction Temperature                                                       150                    
Tstg                   Storage Temperature                                                      -55-150                  

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                              Symbol       Test   conditions           MIN        TYP     MAX       UNIT

     Collector-base breakdown voltage                 V (BR) CBO    IC=50A, IE=0                20                            V

     Collector-emitter breakdown voltage              V (BR) CEO    IC =1mA, IB=0               15                            V

     Emitter-base breakdown voltage                    V (BR) EBO   IE= 50A, IC=0               6.5                           V

     Collector cut-off current                           ICBO       VCB= 20 V, IE=0                                0.1       A

     Emitter cut-off current                             IEBO       VEB= 6V, IC=0                                  0.1       A

     DC current gain                                      hFE       VCE=1V, IC= 100mA           150

     Collector-emitter saturation voltage             VCE (sat)     IC=500mA, IB= 50mA                             0.3        V

     Transition frequency                                  fT       VCE=5V,    IC=50mA                     260               MHz

     Collector output capacitance                        Cob        VCB=10V, IE=0, f=1MHz                   5                pF

                                                                    f=1KHz,IB=1mA,
     On resistance                                       RON                                                0.6               
                                                                    VIN=0.3V
                              STD123S
                          SOT-23 Transistor(NPN)


Typical characteristics

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